Research Article Open Access

Preparation of Porous Silicon P-Type and Thermal Diffusivity Measurement Using Photoacoustic Technique

Mohammed Jabbar Hussein1, Suaad Sahib Hindal1 and Amany Akram Awaad1
  • 1 Laser and Electro-Optic Centre, Iraq

Abstract

Porous silicon (PSi) layers were formed on a p-type Si wafer. Electrochemical method was used to prepare 36 samples with three values of current density (10, 20 and 30) mA/cm2, each involved ( 20, 40, 60 and 80) min etching times the samples were heated to three selected temperatures of 100, 200 and 350°C in three groups. The first group covers 12 samples corresponding to 10 mA/cm2 while the other two correspond to the remaining values of current density respectively. Each annealing process for these sample groups lasted three hours in ambient air. The morphology of the layers, before and after annealing, formed by this method was investigated by Scanning Electron Microscope (SEM). Photoacoustic technique (PA) was employed carry out Thermal Diffusivity (TD) measurements. In this study, the porosity and thickness porous increased with increasing current density and etching time. While the thermal diffusivity TD increases with increasing annealing temperature.

International Journal of Structural Glass and Advanced Materials Research
Volume 2 No. 1, 2018, 191-197

DOI: https://doi.org/10.3844/sgamrsp.2018.191.197

Submitted On: 10 January 2018 Published On: 14 November 2018

How to Cite: Hussein, M. J., Hindal, S. S. & Awaad, A. A. (2018). Preparation of Porous Silicon P-Type and Thermal Diffusivity Measurement Using Photoacoustic Technique. International Journal of Structural Glass and Advanced Materials Research, 2(1), 191-197. https://doi.org/10.3844/sgamrsp.2018.191.197

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Keywords

  • Porous Silicon
  • Photoacoustic
  • Thermal Diffusivity
  • Etching Time
  • Current Density