Research Article Open Access

Optoelectronic Characterisation of Silicon and CIGS Photovoltaic Solar Cells

Afonso Ravasco1, Ricardo A. Marques Lameirinhas2, Catarina Pinho Correia Valério Bernardo2 and João Paulo N. Torres3
  • 1 Instituto de Telecomunicações, Lisbon, Portugal
  • 2 Department of Electrical and Computer Engineering, Universidade de Lisboa-Instituto Superior Técnico, Portugal
  • 3 Academia Militar/CINAMIL, Av. Conde Castro Guimarães, Amadora, Portugal


Throughout these years, many materials have been subjected to tests and experiments, creating several photovoltaic technologies and generations. In this article, some of these generations are compared, namely silicon and Copper Indium Gallium di-Selenide (CIGS), in order to characterize both materials in an optoelectronic way. Using a 2D solar cell PIN model using COMSOL software, both materials are tested, obtaining the responsivity and the I(P) curves. In addition, experimental tests are also conducted, in order to have real results to compare. Additionally, Scanning Electron Microscopy (SEM) was performed to analyze the morphology of photovoltaics inside layers. The obtained results show that Si solar cells present properties close to those predicted by the 2D model, in opposition to the CIGS. That difference was found to be the amount of generated current and more, gallium concentration has a remarkable effect on the CIGS photovoltaics real performance.

American Journal of Engineering and Applied Sciences
Volume 17 No. 1, 2024, 23-32


Submitted On: 13 November 2023 Published On: 30 January 2024

How to Cite: Ravasco, A., Lameirinhas, R. A. M., Bernardo, C. P. C. V. & Torres, J. P. N. (2024). Optoelectronic Characterisation of Silicon and CIGS Photovoltaic Solar Cells. American Journal of Engineering and Applied Sciences, 17(1), 23-32.

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  • Optoelectronic Devices
  • Photovoltaic Technology
  • Renewable Energy
  • Semiconductors